摘要: Expressions for the noise parameters of microwave transistors are derived. The theory is based on a small-signal common-emitter equivalent circuit which includes new basic and dominanting header parasitics. verified experimentally in L-band (1 to 2 Gc/s) frequency range using Ge Si transistors. It found that parasitics have little influence minimum figure, but do large effects resistance optimum source admittance region above about one-half series-resonant resulting from conjunction with wafer parameters. For quick evaluation performance, approximate expressions also given figure current produces lowest value.