A simplified analytical model of diamond growth in direct current arcjet reactors

摘要: A simplified model of a direct current arcjet-assisted diamond chemical vapor deposition reactor is presented. The based upon detailed theoretical analysis the transport and processes occurring during deposition, formulated to yield closed-form solutions for growth rate, defect density, heat flux substrate. In arcjet there natural division physical system into four characteristic domains: plasma torch, free stream, boundary layer, surface, leading development thermodynamic, transport, kinetic models each regions. these regions are linked form single unified model. For relatively wide range operating conditions, this yields results that in good quantitative agreement with stagnation flow containing multicomponent kinetics. However, contrast models, presented here executes near real-time on computer modest size, can therefore be readily incorporated process control or global dynamic loop simulations.