作者: Sankaran Sivaramakrishnan , Mi Zhou , Aravind C. Kumar , Zhi-Li Chen , Rui-Qi Png
DOI: 10.1063/1.3257979
关键词:
摘要: Polymer p-i-n homojunction light-emitting diodes (LEDs) comprising p-doped poly(dioctylfluorene-alt-benzothiadiazole) (F8BT) hole-injection, intrinsic F8BT emitter, and n-doped electron-injection layers have been demonstrated. A thin film was photocrosslinked bulk by nitronium oxidation, then overcoated with an layer which surface contact printing naphthalenide on elastomeric stamp. These LEDs exhibit high built-in potential (Vbi=2.2 V), efficient bipolar injection, greatly improved external electroluminescence efficiency compared to control devices without the structure. modulated photocurrent technique used measure this Vbi, systematically improves diode