作者: Adel Kalache , Susanne Selle , Walter Schnelle , Gerhard H. Fecher , Thomas Höche
DOI: 10.1103/PHYSREVMATERIALS.2.084407
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摘要: High perpendicular magnetic anisotropy is essential for the development of high-efficiency spintronics devices. In this paper, we investigate structural and properties Mn-Fe-Ga Heusler thin films with inherent to tetragonal $D{0}_{22}$ structure. quality were heteroepitaxially grown on ${\mathrm{SrTiO}}_{3}$ substrates by magnetron sputtering technique. The such as saturation magnetization coercive field are easily tunable variation Mn/Fe ratio, while retaining out-of-plane over large composition range. uniaxial was improved in ${\mathrm{Mn}}_{2.6\ensuremath{-}x}{\mathrm{Fe}}_{x}{\mathrm{Ga}}_{1.4}$ through Fe substitution at a fixed Ga excess. Films ${\mathrm{Mn}}_{1.6}{\mathrm{Fe}}_{1}{\mathrm{Ga}}_{1.4}$ found be stable down thickness 10 nm. Transmission electron microscopy investigations proved high well chemical homogeneity. Hall effect exhibits an anomalous contribution that dominates normal part, leading angle $3.4%$. These findings suggest great potential integration materials into spintronic