Quantum wires from coupled InAs/GaAs strained quantum dots

摘要: The electronic structure of an infinite 1D array vertically coupled InAs/GaAs strained quantum dots is calculated using eight-band strain-dependent k-dot-p Hamiltonian. form a unique wire in which the miniband widths and effective masses are controlled by distance between islands, d. as function d, it shown that for d>4 nm narrower than optical phonon energy, while gap first second minibands greater energy. This leads to decreased scattering, providing improved behavior at high temperatures. These properties also ideal Bloch oscillation.