Tight-binding study of electron-hole pair condensation in graphene bilayers: Gate control and system-parameter dependence

作者: D. Basu , L. F. Register , Dharmendar Reddy , A. H. MacDonald , S. K. Banerjee

DOI: 10.1103/PHYSREVB.82.075409

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摘要: The theoretical prediction of high-temperature electron-hole pair condensation when two graphene layers are separated by a thin dielectric film has motivated experimental work which aims to observe this condensate, and explores how its collective behavior could be used design beyond-CMOS low-power electronic logic devices. Here we use $\ensuremath{\pi}$-band tight binding model combined with Fock mean-field theory explore the condensate properties. We study effects charge density, permittivity, interlayer separation, temperature, on formation strength condensate. weakening eventual collapse increasing imbalance between layers, mechanism been proposed for switching based control. Finally, critical currents in weak-coupling limit. demonstrate that current is extremely sensitive character tunneling processes, especially these weak.

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