Photoelectrochemical Properties of TiO2 Films Prepared by the Sol-Gel Method

摘要: TiO2 films up to about 2μm thick have been prepared on a nesa glass substrate by dip-coating technique using the sol solution derived from Ti(O-i-C3H7)4. Photoelectrochemical properties of film electrode thus obtained investigated as potential candidate for solar energy conversion device. The results are summarized follows:(1) sol-gel shows very large photocurrent due porous surface structure and maximum (-14mA cm-2) at 1.8μm in thickness. A decrease above is an increase resistance.(2) An additional heating 500°C improves remarkably film, although too long rather deteriorates it. These explained basis changes carrier concentration with time.