Critical angles and low-energy limits to ion channeling in silicon
作者： G. Hobler
DOI: 10.1080/10420159608212927
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摘要: Abstract Channeling theory is reviewed and some improvements are presented. Several models for the calculation of critical approach distances, angles, minimum energies channeling compared. While influence choice interatomic potential small, existing distance yield rather different results particularly in case planar channeling. An improved model proposed based on binary collision simulations. A low-energy limit to ion along a given axis or plane defined by equating with channel radius. Minimum angles as function energy presented B, P, As Si major channels. In B from these data maps constructed compared obtained The predicted shown agree well large number experimental da...
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