Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire
作者： L. T. Romano , B. S. Krusor , R. Singh , T. D. Moustakas
DOI: 10.1007/S11664-997-0165-X
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摘要: GaN films grown by electron-cyclotron resonance plasma-assisted molecular beam epitaxy were studied transmission electron microscopy and x-ray diffraction (XRD). Two sets of compared that under identical conditions except for the ratio Ga to N flux. Films with a 30% higher (A films) found contain inversion domains (IDs). No IDs in lower (B films), but instead zinc-blende was near film substrate interface. A narrower XRD rocking curve width along (0002) direction broader asymmetric (1102) axis B films.
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