Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods

摘要: Heat removal from III-Nitride-based devices into a substrate depends also on an acoustic coupling at III-Nitride/substrate interface. We investigate thermal boundary resistance (TBR) and its effects temperature distribution for GaN layers Si, SiC, or sapphire substrates. Micro-Raman method is used the investigation of TBR GaN/Si interface while transient interferometric mapping (TIM) GaN/SiC GaN/sapphire systems. Thermal modeling to analyze experimental data. found be ∼7×10−8 m2 K/W ∼1.2×10−7 m2 K/W interfaces. The role in poor heat transfer less important. It suggested that cooling efficiency may improved if fewer defects are present epistructure.