Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

摘要: Because of the “Boltzmann tyranny” (i.e., nonscalability thermal voltage), a certain minimum gate voltage in metal–oxide–semiconductor (MOS) devices is required for 10-fold increase drain-to-source current. The subthreshold slope (SS) MOS is, at best, 60 mV/decade 300 K. Negative capacitance organic/ferroelectric materials proposed order to address this physical limitation technology. Here, we experimentally demonstrate steep switching behavior device—that SS ∼ 18 (much less than mV/decade) K—by taking advantage negative stack. This capacitance, originating from dynamics stored energy phase transition ferroelectric material, can achieve step-up conversion internal amplification device). With aid series-connected capacitor as an assistive device, surface potential device becomes higher ...