The bulk generation-recombination processes and the carrier lifetime in mid-wave infrared and long-wave infrared liquid nitrogen cooled HgCdTe alloys
作者： K. Jóźwikowski , M. Kopytko , A. Rogalski
DOI: 10.1063/1.4745872
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摘要: Comprehensive study of the bulk generation-recombination mechanisms and carrier lifetime in long wavelength mid infrared indium-doped as well arsenic- mercury vacancies-doped HgCdTe ternary alloys at liquid nitrogen temperature has been done. The excess minority materials calculated by solving set non-linear transport equations under conditions small deviation from equilibrium. results numerical calculations determined Auger 1, 7, Shockley-Read-Hall related to vacancies have compared with experimental data available literature. We re-examine lifetime, including impact electrical screening on Coulomb interaction carriers process explain certain inconsistency between theoretical prediction especially highly doped p-type material. Moreover, marginal significance interband radi...
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