A process for device fabrication in which the plasma etch is controlled by monitoring optical emission

摘要: The present invention is directed to a process for device fabrication in which pattern transferred from photoresist mask into an underlying layer of silicon dioxide. A plasma containing fluorocarbon gas used etch the dioxide layer. monitored using optical emission spectroscopy effect control process. at select wavelengths. To based on observation rate , two wavelengths are monitored. One associated with species that produced by interaction between and plasma, one related intensity. ratio intensity these determined real time during processing, acceptable conditions referring predetermined calibration curve associates particular given set conditions. If observed not be within certain range ratios indicate conditions, either changed bring back desired range, or stopped until problem corrected. contact hole rate, wavelength different times etch. measured obtained. Calibration information then determine if indicates proceeding acceptably. remedial action taken.