作者: T. W. Ang , G. T. Reed , A. Vonsovici , A. G. R. Evans , P. R. Routley
DOI: 10.1063/1.1334910
关键词:
摘要: In this letter, we report, design and fabrication of good asymmetrical Si-blazed gratings with a pitch of 383 nm, fabricated in unibond silicon-on-insulator using angled ion-beam etching. …