Emerging resistive switching memory technologies: Overview and current status
DOI: 10.1109/ISCAS.2014.6865264
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摘要: … switching memories (RRAM). … [6], carbon based resistive switching memories [7], and resistive polymer memories [8]. Redox effects likely play a significant role in certain types of carbon …
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osti.gov 参考文章(34)
I.G. Baek, M.S. Lee, S. Sco, M.J. Lee, D.H. Seo, D.-S. Suh, J.C. Park, S.O. Park, H.S. Kim, I.K. Yoo, U.-I. Chung, J.T. Moon, Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses international electron devices meeting. pp. 587- 590 ,(2004) , 10.1109/IEDM.2004.1419228
Matthew J. Marinella, Victor V. Zhirnov, Emerging Memory Devices: Assessment and Benchmarking Emerging Nanoelectronic Devices. pp. 246- 276 ,(2014) , 10.1002/9781118958254.CH13
Tz-Yi Liu, Tian Hong Yan, R. Scheuerlein, Yingchang Chen, J. K. Lee, G. Balakrishnan, G. Yee, H. Zhang, A. Yap, J. Ouyang, T. Sasaki, S. Addepalli, Ali Al-Shamma, Chin-Yu Chen, M. Gupta, G. Hilton, S. Joshi, A. Kathuria, V. Lai, D. Masiwal, M. Matsumoto, A. Nigam, A. Pai, J. Pakhale, Chang Hua Siau, Xiaoxia Wu, R. Yin, Liping Peng, Jang Yong Kang, S. Huynh, Huijuan Wang, N. Nagel, Y. Tanaka, M. Higashitani, T. Minvielle, C. Gorla, T. Tsukamoto, T. Yamaguchi, M. Okajima, T. Okamura, S. Takase, T. Hara, H. Inoue, L. Fasoli, M. Mofidi, R. Shrivastava, K. Quader, A 130.7mm 2 2-layer 32Gb ReRAM memory device in 24nm technology international solid-state circuits conference. pp. 210- 211 ,(2013) , 10.1109/ISSCC.2013.6487703
Ilia Valov, Rainer Waser, John R Jameson, Michael N Kozicki, Electrochemical metallization memories—fundamentals, applications, prospects Nanotechnology. ,vol. 22, pp. 254003- 254003 ,(2011) , 10.1088/0957-4484/22/25/254003
Ilia Valov, Michael N Kozicki, Cation-based resistance change memory Journal of Physics D. ,vol. 46, pp. 074005- ,(2013) , 10.1088/0022-3727/46/7/074005
Zhiping Zhang, Yi Wu, H-S Philip Wong, S Simon Wong, None, Nanometer-Scale ${\rm HfO}_{x}$ RRAM IEEE Electron Device Letters. ,vol. 34, pp. 1005- 1007 ,(2013) , 10.1109/LED.2013.2265404
J. Joshua Yang, M.-X. Zhang, Matthew D. Pickett, Feng Miao, John Paul Strachan, Wen-Di Li, Wei Yi, Douglas A. A. Ohlberg, Byung Joon Choi, Wei Wu, Janice H. Nickel, Gilberto Medeiros-Ribeiro, R. Stanley Williams, Engineering nonlinearity into memristors for passive crossbar applications Applied Physics Letters. ,vol. 100, pp. 113501- ,(2012) , 10.1063/1.3693392
S Ambrogio, S Balatti, F Nardi, S Facchinetti, D Ielmini, Spike-timing dependent plasticity in a transistor-selected resistive switching memory. Nanotechnology. ,vol. 24, pp. 384012- ,(2013) , 10.1088/0957-4484/24/38/384012
Hyung Dong Lee, S. G. Kim, K. Cho, H. Hwang, H. Choi, J. Lee, S. H. Lee, H. J. Lee, J. Suh, S.-O. Chung, Y. S. Kim, K. S. Kim, W. S. Nam, J. T. Cheong, J. T. Kim, S. Chae, E.-R. Hwang, S. N. Park, Y. S. Sohn, C. G. Lee, H. S. Shin, K. J. Lee, K. Hong, H. G. Jeong, K. M. Rho, Y. K. Kim, S. Chung, J. Nickel, J. J. Yang, H. S. Cho, F. Perner, R. S. Williams, J. H. Lee, S. K. Park, S.-J. Hong, Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications symposium on vlsi technology. pp. 151- 152 ,(2012) , 10.1109/VLSIT.2012.6242506
M. N. Kozicki, P. Dandamudi, H. J. Barnaby, Y. Gonzalez-Velo, Invited) Programmable Metallization Cells in Memory and Switching Applications 224th ECS Meeting (October 27 – November 1, 2013). ,vol. 58, pp. 47- 52 ,(2013) , 10.1149/05805.0047ECST