作者: Wei Wang , Lingzi Li , Eng Soon Tok , Yee-Chia Yeo
DOI: 10.1063/1.4922423
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摘要: This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge 0.83 Sn0. 17-on-Ge (001) substrate. Fully strained germanium-tin alloys (Ge 0.83 Sn0. 17) were epitaxially grown on Ge (001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge 0.83 Sn0. 17 during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron …