Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
作者： Robert L. Thornton
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摘要: A lateral heterojunction bipolar transistor (LHBT) comprises emitter and/or collector regions forming a p-n heterojunctions at the emitter/base junction and collector/base with planar base region wherein least is formed by employing impurity induced disordering (IID) to produce or of wider bandgap than region. The this invention can also double as hetero transverse (HTJ) laser.
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