Transport properties of high-Tc planar Josephson junctions fabricated by nanolithography and ion implantation
作者： A. S. Katz , S. I. Woods , R. C. Dynes
DOI: 10.1063/1.372286
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摘要: We have developed a process for fabrication of planar high-Tc Josephson junctions using nanolithography and 200 keV ion implanter. Conduction occurs in the ab plane has no metallurgical interface. Devices may be tuned to operate at temperatures between 1 K Tc undamaged superconducting material by varying length weak link or changing amount damage. examined normal state properties these films find behavior consistent with de Gennes dirty limit proximity effect model. Current–voltage curves, Ic(T) R(T) data suggest temperature dependent superconducting-normal metal interface that we incorporated into
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