Electronic structure and properties of NiSi 2 and CoSi 2 in the fluorite and adamantane structures

作者: Walter R. L. Lambrecht , Niels E. Christensen , Peter Blöchl

DOI: 10.1103/PHYSREVB.36.2493

关键词:

摘要: An electronic-band-structure study of ${\mathrm{NiSi}}_{2}$ and ${\mathrm{CoSi}}_{2}$ is performed by means the linear-muffin-tin-orbital method for both fluorite hypothetical adamantane structures, i.e., silicon with tetrahedral interstitial metal atoms. Energy bands along symmetry lines, densities states, charge densities, total energies are presented. In addition, equilibrium lattice constant, bulk modulus, cohesive obtained from total-energy pressure calculations as a function volume. Special attention given to relative stability structures. The experimentally observed structure found be lower in energy more than 1 eV cases. difference analyzed discussed terms electronic structure. electrostatic due transfer play significant role, well tendency form Ni\char22{}Si covalent bonds case.

参考文章(26)
C. Calandra, O. Bisi, G. Ottaviani, Electronic properties on silicon-transition metal interface compounds Surface Science Reports. ,vol. 4, pp. 271- 364 ,(1985) , 10.1016/0167-5729(85)90005-6
R. T. Tung, K. K. Ng, J. M. Gibson, A. F. J. Levi, Schottky-barrier heights of single-crystal NiSi2 on Si(111): The effect of a surface p-n junction. Physical Review B. ,vol. 33, pp. 7077- 7090 ,(1986) , 10.1103/PHYSREVB.33.7077
Yu-Jeng Chang, J. L. Erskine, Diffusion-layer microstructure of Ni on Si(100) Physical Review B. ,vol. 26, pp. 4766- 4769 ,(1982) , 10.1103/PHYSREVB.26.4766
Yu-Jeng Chang, J. L. Erskine, Diffusion layers and the Schottky-barrier height in nickel silicide—silicon interfaces Physical Review B. ,vol. 28, pp. 5766- 5773 ,(1983) , 10.1103/PHYSREVB.28.5766
A. Franciosi, J. H. Weaver, F. A. Schmidt, Electronic structure of nickel silicidesNi2Si, NiSi, and NiSi2 Physical Review B. ,vol. 26, pp. 546- 553 ,(1982) , 10.1103/PHYSREVB.26.546
R. T. Tung, Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces Physical Review Letters. ,vol. 52, pp. 461- 464 ,(1984) , 10.1103/PHYSREVLETT.52.461
M Liehr, PE Schmid, FK LeGoues, PS Ho, None, Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111) Physical Review Letters. ,vol. 54, pp. 2139- 2142 ,(1985) , 10.1103/PHYSREVLETT.54.2139
J. C. Hensel, R. T. Tung, J. M. Poate, F. C. Unterwald, Specular boundary scattering and electrical transport in single-crystal thin films of CoSi2. Physical Review Letters. ,vol. 54, pp. 1840- 1843 ,(1985) , 10.1103/PHYSREVLETT.54.1840
J. C. Hensel, A. F. J. Levi, R. T. Tung, J. M. Gibson, Transistor action in Si/CoSi2/Si heterostructures Applied Physics Letters. ,vol. 47, pp. 151- 153 ,(1985) , 10.1063/1.96245