Activation energy for surface diffusion in GaInNAs quantum wells
作者： M Herrera , D González , J G Lozano , M Hopkinson , M Gutierrez
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摘要: The analysis by transmission electron microscopy of GaInNAs/GaAs(001) quantum wells grown at different temperatures in the range 375–420 °C is reported. Our results with 220BF reflection have shown existence periodic strain contrasts all wells, associated composition fluctuations alloy. These are more pronounced increasing growth temperature, revealing a kinetic limitation for formation phase separation. With theoretical equation proposed Cahn and amplitude intensity profiles taken from micrographs, activation energy surface diffusion GaInNAs calculated.
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