Photoluminescence in GaN and InGaN and their applications in photonics
作者： Annamraju Kasi Viswanath
DOI: 10.1016/B978-012513745-4/50015-9
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摘要: Publisher Summary Photoluminescence and time-resolved spectroscopy of gallium nitride (GaN)- indium (InGaN)-based materials devices are discussed in this chapter. The chapter discusses the results obtained various studies photoluminescence properties GaN related materials. experimental techniques covered include optical absorption, photoreflection (PR), modulation spectroscopy, spectroscopic ellipsometry, (PL), PL, micro-PL, cathodoluminescence, pump-probe femtosecond spectrally resolved degenerate four-wave mixing, second harmonic generation, laser-induced gratings, quantum beats. development large area single-crystal growth may provide ultimate solution to problem lattice mismatch. other III–V nitrides have been realized as potential candidates photonics. Light emitting diode (LEDs) semiconductor lasers that emit a variety wavelengths from blue yellow now commercially available. They being used full-color displays traffic lights. LEDs colors also substitutes for traditional fluorescent lamps can be homes shops. market is huge. Blue find applications laser printers underwater communications Navy. In near future, it possible develop digital video disks which InGaN used.
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