Dielectric confinement effect for exciton and biexciton states in PbI4-based two-dimensional semiconductor structures

作者: T. Ishihara , X. Hong , J. Ding , A.V. Nurmikko

DOI: 10.1016/0039-6028(92)91147-4

关键词:

摘要: … confinement effect is to change the dielectric constant of the barrier layer while maintaining an otherwise unchanged material … We have investigated various barrier materials and report …

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