Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes
作者： Min-Chang Jeong , Byeong-Yun Oh , Moon-Ho Ham , Jae-Min Myoung
DOI: 10.1063/1.2204655
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摘要: ZnO nanowire-array-embedded n-ZnO∕p-GaN heterojunction light-emitting diodes were fabricated by growing Mg-doped p-GaN films, nanowire arrays, and polycrystalline n-ZnO films consecutively. Electroluminescence emission having the wavelength of 386nm was observed under forward bias in UV-violet light emerged from nanowires. The diode thermal treated hydrogen ambient to increase electron injection rate into High concentration electrons supplied activated radiative recombination nanowires, i.e., increased efficiency diode.
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