Enhancing the saturation magnetisation in Ni doped ZnO thin films by TOPO functionalization
作者： Sivanantham Nallusamy , Gopalakrishnan Nammalvar
DOI: 10.1016/J.JMMM.2019.04.089
关键词:
摘要: Abstract The saturation magnetization in Ni doped ZnO thin films have been triggered by altering the electronic configuration of surface functionalization with Trioctail Phosphine Oxide (TOPO). Initially, (3, 5 and 7 mol %) grown RF magnetron sputtering same were functionalized Trioctylphosphine oxide (TOPO) later spin coating. XRD analysis confirms hexagonal wurtzite structure films. It has found that lower grain size for both unfunctionalized 5 mol% PL emission at around 530 nm reveals presence oxygen vacancies which is actually cause origin ferromagnetism. values 5.70 emu/cm3, 10.14 emu/cm3 8.51 emu/cm3 obtained from VSM enhanced to 7.81 emu/cm3, 11.51 emu/cm3 9.61 emu/cm3 upon TOPO functionalization. high film attributed crystallite (high boundaries) higher vacancies. Zn-P bond observed XPS spectrum formation layer between Zn P atom responsible enhancement magnetization. peak 1146 cm−1 Raman spectra also element, TOPO. simple mechanism based on bound magnetic poloran charge distribution proposed explain room temperature
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