Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
作者： Mahendra Chhabra , Kang Sub Yim , Alexandros T. Demos
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摘要: An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages by reducing a thickness oxide adhesion layer in stack, thereby lowering non-uniformity to less than 2%. The process deposits and bulk at lower deposition rate plasma density combination with higher total flow rate, resulting better packing/ordering co-deposited species during which causes mechanical strength porosity.
lens.org 参考文章(4)
Juan Carlos Rocha-Alvarez, Nagarajan Rajagopalan, Dustin W. Ho, Alexandros T. Demos, Visweswaren Sivaramakrishnan, Kelvin Chan, Method of improving initiation layer for low-k dielectric film by digital liquid flow meter ,(2008)
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