Photoemission study of composition- and temperature-induced metal-insulator transitions in Cr-doped V2O3.

作者: Kevin E. Smith , Victor E. Henrich

DOI: 10.1103/PHYSREVB.50.1382

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摘要: The variety and complexity of the metal-insulator transitions that V[sub 2]O[sub 3] undergoes, in both pure form when doped with other transition-metal ions, have resulted widespread interest electronic structure this oxide. We report here results a photoemission study Cr-doped metallic insulating states. At room temperature, exhibits low emission intensity at [ital E][sub F]]. When cooled, transition to state is observed 210 K. F]] width V 3[ital d] increase below transition. Additionally, O 1[ital s] 2[ital p] core-level changes, resembling 3]. cooled further, another occurs from second state. decreases narrows. reverted room-temperature changes density-of-states bandwidth were found be consistent Fermi-liquid theory these transitions; emissionmore » are identified different core-hole screening states.« less

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