Memory cell comprising non-self-aligned horizontal and vertical control gates
作者： Julien Delalleau , Arnaud Regnier , Francesco La Rosa , Stephan Niel
DOI:
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摘要: The present disclosure relates to a memory cell comprising vertical selection gate extending in trench made substrate, floating above the and horizontal control gate, wherein also extends portion of over non-zero overlap distance. Application mainly production split programmable by hot-electron injection.
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