作者: Arsenty Kaganskiy , Fabian Gericke , Tobias Heuser , Tobias Heindel , Xavier Porte
DOI: 10.1063/1.5017692
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摘要: We report on the realization of micropillars with site-controlled quantum dots (SCQDs) in active layer. The SCQDs are grown via buried stressor approach which allows for positioned growth and device integration a controllable number QDs high optical quality. This concept is very powerful as position cavity can be simultaneously controlled by design buried-stressor. fabricated exhibit degree control above Q-factors up to 12 000 at an emission wavelength around 930 nm. experimentally analyze numerically model Q-factor, mode volume, Purcell factor, photon-extraction efficiency function aperture diameter stressor. Exploiting these SCQD micropillars, we observe enhancement single-QD regime FP = 4.3 ± 0.3.