Study of electrical and dielectric behavior of Tb +3 substituted Y-type hexagonal ferrite

摘要: Abstract A series of Y-type hexa-ferrites with composition, Ba 2 Zn Tb x Fe 12 − O 22 (0 ⩽   ⩽ 0.1), were synthesized by the sol–gel auto-combustion technique. The X-ray powder diffraction technique was employed to confirm formation phase. dispersion in dielectric constant, loss, and σ ac frequency shows that at low frequencies is due Maxwell–Wagner type interfacial polarization general hopping charge carrier between 2+ 3+ ions. substitution +3 inhibit valence exchange +2 therefore permittivity decreased. DC resistivity increased from 7.29 × 10 7 4.73 × 10 8  Ω cm increasing Tb-contents unavailability ions octahedral sites. enhanced hexa ferrites makes them suitable candidates for multi-layer chip inductor applications.