The role of nickel in Si(001) roughening
作者： V.A Ukraintsev , John T Yate
DOI: 10.1016/0039-6028(95)00779-2
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摘要: Abstract The role of Ni impurities on the structure Si(001)-(2 × 1) surface has been investigated by statistically comparin STM patterns with Auger spectra. Characteristic reconstructed local structures (“split off dimers” and “vacancy channels”) are observed for different concentrations as measured electron spectroscopy, it is shown that image provides a high sensitivity to Ni. For levels contamination, long range roughening Si(001) resulting in more than 50 A corrugation loss atomic detected STM. Crystal support cleaning procedures crystal annealing have devised permitting crystals be repeatedly heated over time periods without undergoing contamination or macroscopic roughening.
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