Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

摘要: A fabrication process of a novel SOI material with non-planar buried oxide layer was developed using series key processes.A high quality film made by dry etching,thermal growth,and chemical-vapor deposition.A poly-silicon buffer for bonding deposited CVD and planarized photoresist block masking chemical mechanical polishing.The active substrate wafers were bonded vacuum contacting at room temperature,with pre-bonding moderate temperature final firming temperature.Based on these processes,a fabricated.The structure includes an thickness 21μm,a 0.943μm,and self-aligned top bottom trenches thicknesses about 0.9μm.The measurements indicate interface large combining intensity excellent electrical performance breakdown electric field.