Chemical vapor deposition of titanium nitride at low temperatures
作者： S.R. Kurtz , R.G. Gordon
DOI: 10.1016/0040-6090(86)90271-3
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摘要: A new method is proposed for making titanium nitride (TiN) films at substrate temperatures between about 400 and 700C. The films are formed from TiCl 4 and NH 3 by chemical vapor …
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