作者: Xuehong Zhang , Xiujuan Zhuang , Anlian Pan , Junwu Liang , Zhouxiaosong Zeng
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摘要: van der Waals (vdW) vertical p–n junctions based on two-dimensional (2D) materials have shown great potential in flexible, self-driven, high-efficiency electronic and optoelectronic applications. However, due to the complex nucleation dynamics, the controllable synthesis of vertical heterostructures remains a daunting challenge. Here, we report the controlled growth of vertical GaSe/MoS2 p–n heterojunctions via a liquid gallium (Ga)-assisted chemical vapor deposition method. The growth mechanism can be interpreted by theoretical …