摘要: Aluminum layers of some nanometers thickness have been deposited onto α‐SiC crystals and studied by x‐ray ultraviolet photoelectron spectroscopies as a function annealing temperature. Annealing beyond 600 °C induces complete disappearance metallic Al on the crystal surface, penetration into bulk, formation aluminum carbide. Ultraviolet photoemission spectra recorded after at 360 °C could be explained beginning interfacial reaction. However, there is no clear experimental evidence that reaction occurs such low
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