作者: A. Kennedy , K. Viswanathan , N. Krishnamoorthy , K. Pradeev raj
DOI: 10.1016/J.MSSP.2016.03.008
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摘要: Abstract Manganese indium sulphide (MnIn 2 S 4 ) thin films were deposited using an aqueous solution of MnCl , InCl 3 and (NH CS in the molar ratio 1:2:4 by simple chemical spray pyrolysis technique. The film substrates annealed temperature range between 250 350 °C to study their various physical properties. structural properties as studied X-ray diffraction showed that MnIn have cubic spinel structure. formation cube needle shaped grains was clearly observed from FE-SEM analysis. energy dispersive spectrum (EDS) predicts presence Mn, In synthesized film. From optical studies, it is analyzed maximum absorption co-efficient order 10 5 cm −1 transmittance (75%) noted visible infrared regions. It that, band gap decreases (from 3.20 2.77 eV) with increase substrate 350 °C). observations photoluminescence studies confirm emission blue, green, yellow red bands which corresponds wavelength 370–680 nm. Moreover, electrical increases conductivity also 0.29–0.41×10 −4 Ω m . This confirms highly semiconducting nature thickness measured values ranged 537 nm (250 °C) 483 nm (350 °C). indicates increases, decreases. present study, reported are polycrystalline can be used a suitable ternary semiconductor material for photovoltaic applications.