作者: S Xetal Dou , Saeid Soltanian , J Horvat , XL Wang , SH Zhou
DOI: 10.1063/1.1517398
关键词:
摘要: Doping of MgB2 by nano-SiC and its potential for the improvement flux pinning were studied MgB2−x(SiC)x/2 with x=0, 0.2, 0.3 10 wt % nano-SiC-doped samples. Cosubstitution B Si C counterbalanced effects single-element doping, decreasing Tc only 1.5 K, introducing intragrain centers effective at high fields temperatures, significantly enhancing Jc Hirr. Compared to undoped sample, doped sample increased a factor 32 5 K 8 T, 42 20 14 30 2 T. At was 2.4×105 A/cm2, which is comparable values best Ag/Bi-2223 tapes. 4 twice as thin films an order magnitude higher than Fe/MgB2 The magnetic consistent transport remains 20 000 A/cm2 even T one. Because o...