Dramatic Enhancement in Photoresponse of β-In2S3 through Suppression of Dark Conductivity by Synthetic Control of Defect-Induced Carrier Compensation.

摘要: We report on the synthesis of dense and faceted indium sulfide (β-In2S3) nano-octahedron films fluorine-doped tin oxide-coated glass by hydrothermal method their photoresponse properties in a flip chip device configuration. have examined temporal evolution phase constitution, morphology, optoelectronic for obtained after growth interruption at specific intervals. It is noted that, initially, an In(OH)3 film forms, which gradually transformed to β-In2S3 over time. In case wherein most, but not all, consumed, exceptionally large (light dark current ratio) ∼104 response time(s) (rise/fall) ∼88/280 ms are realized. This superior performance attributed nearly complete carrier compensation achievable system under high pressure leading dramatic reduction conductivity. argued that temporally growth-controlled equilibrium between quasi-In interstitials ...