Determination of the intrinsic carrier concentration in InSb by helicon waves
作者： H. Bernot , H. Hinsch
DOI: 10.1007/BF00889545
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摘要: The intrinsic carrier concentration in InSb was determined, between 246 and 370 K, by a helicon method consisting of microwave interferometer at 34 GHz. accuracy the is 1–2%. influence experimental parameters on determination mobilities both electrons holes discussed detail. Comparing data obtained for with Hall effect measurements small difference absolute values found. band-gap deduced agreement measurements.
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