Biexcitons in ZnSe Quantum Wells

摘要: The quasi-2-dimensional character of electron and hole wavefunctions in a semiconductor quantum well leads to an enhancement the exciton binding energy oscillator strength. This effect has been justified theoretically confirmed experimentally by many authors case GaAs wells [1]. For similar reasons, forced confinement carriers with opposite charge same ultrathin layer is expected increase biexciton stability. A calculation Kleiman [2] predicts that best case, can exceed half Rydberg (see Fig. 1). However, on experimental side, there so far very little evidence [3] for biexcitons general particular despite considerable amount spectroscopy studies performed this type material. probably reflects fact bulk small start with, it remains absolute scale even after enhancement.