III/V Nanowires for Electronic and Optoelectronic Applications

摘要: III/V semiconductor nanowires are grown by the vapour–liquid solid growth mode from Au seed particles in an industrial type metal–organic vapour phase epitaxial apparatus. For electronic applications InAs with very high electron were developed on (111), (100), and GaAs (111) substrates. The wires deposited insulating host substrate for metal–insulator–semiconductor FET fabrication. Their excellent DC RF performance presented. optoelectronic focus is selective n- p-type doping. axial p–n junction Pronounced electroluminescence at room temperature reveals quality of fabricated device. Moreover, spatially resolved photocurrent microscopy shows that optical generation carriers took place only vicinity junction. A solar conversion efficiency 9 % was obtained. In summary, emerged to versatile nanoscaled building blocks both applications.