Transformation of a SiC/por-SiC/TiO2 structure during rapid thermal annealing
作者： RV Konakova , OF Kolomys , OS Lytvyn , OB Okhrimenko , VV Strelchuk
DOI: 10.1134/S1063782612090114
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摘要: The surface morphology and the Raman photoluminescence spectra of a SiC/por-SiC/TiO2 structure before after rapid thermal annealing are studied. It is shown that brings about appearance new bands in spectrum; these characteristic carbon compounds. An analysis excited by radiation with an energy lower than band-gap 6H-SiC has porous silicon carbide related to impurity states, which formed at due products chemical reactions course etching.
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