摘要: … The HWA was done at 260C for 3 h. Data at zero pressure represents an as-anodized … a-Si PL and PSi PL follows opposite trends, (3) intense PSi PL can be obtained after oxidation at …
sci-hub.se 参考文章(102)
J Von Behren, M Wolkin-Vakrat, J Jorne, PM Fauchet, None, Correlation of Photoluminescence and Bandgap Energies with Nanocrystal Sizes in Porous Silicon Journal of Porous Materials. ,vol. 7, pp. 81- 84 ,(2000) , 10.1023/A:1009663210016
M.B. de la Mora, J. Bornacelli, R. Nava, R. Zanella, J.A. Reyes-Esqueda, Porous silicon photoluminescence modification by colloidal gold nanoparticles: Plasmonic, surface and porosity roles Journal of Luminescence. ,vol. 146, pp. 247- 255 ,(2014) , 10.1016/J.JLUMIN.2013.09.053
B. Gelloz, H. Koyama, N. Koshida, Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing Thin Solid Films. ,vol. 517, pp. 376- 379 ,(2008) , 10.1016/J.TSF.2008.08.092
Rabah Boukherroub, Danial D. M. Wayner, G. Irwin Sproule, David J. Lockwood, Leigh T. Canham, Stability Enhancement of Partially-Oxidized Porous Silicon Nanostructures Modified with Ethyl Undecylenate1 Nano Letters. ,vol. 1, pp. 713- 717 ,(2001) , 10.1021/NL010061A
Bernard Gelloz, Nobuyoshi Koshida, Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing Thin Solid Films. ,vol. 518, pp. 3276- 3279 ,(2010) , 10.1016/J.TSF.2009.08.043
F. Koch, D. Kovalev, B. Averboukh, G. Polisski, M. Ben-Chorin, Polarization phenomena in the optical properties of porous silicon Journal of Luminescence. ,vol. 70, pp. 320- 332 ,(1996) , 10.1016/0022-2313(96)00067-1
V. Petrova‐Koch, T. Muschik, A. Kux, B. K. Meyer, F. Koch, V. Lehmann, Rapid‐thermal‐oxidized porous Si−The superior photoluminescent Si Applied Physics Letters. ,vol. 61, pp. 943- 945 ,(1992) , 10.1063/1.107736
A. Loni, A. J. Simons, P. D. J. Calcott, L. T. Canham, Blue photoluminescence from rapid thermally oxidized porous silicon following storage in ambient air Journal of Applied Physics. ,vol. 77, pp. 3557- 3559 ,(1995) , 10.1063/1.358587
Q.W. Chen, X. Li, Y. Zhang, Improvement mechanism of photoluminescence in iron-passivated porous silicon Chemical Physics Letters. ,vol. 343, pp. 507- 512 ,(2001) , 10.1016/S0009-2614(01)00762-X
R. Boukherroub, S. Morin, D. D. M. Wayner, F. Bensebaa, G. I. Sproule, J.-M. Baribeau, D. J. Lockwood, Ideal passivation of luminescent porous silicon by thermal, noncatalytic reaction with alkenes and aldehydes Chemistry of Materials. ,vol. 13, pp. 2002- 2011 ,(2001) , 10.1021/CM000790B