Growth and characterization of Zn Mn(subscript x)Se epilayers and ZnSe/Zn Mn(subscript x)Se quantum wells

摘要: Zn(subscript 1-x)Mn(subscript x)Se epilayers and ZnSe/ 1-x) Mn(subscript quantum well structures were grown by molecular beam epitaxy. The growth was monitored the reflection high energy electron diffraction. band edge excitonic transitions measured reflectivity photoluminescence measurements. longitudinal transverse optical phonon energies obtained Raman scattering far infrared measurement. In addition, transmission microscopy used to investigate interfacial stacking faults characterize rate.