Implanted Tin Oxide Thin Films for Selective Gas Sensing
作者： F. C. Stedile , C. V. Barros Leite , W. H. Schreiner , I. J. R. Baumvol
DOI: 10.1007/978-3-642-76376-2_73
关键词:
摘要: Tin oxide thin films obtained by reactive sputtering were submitted to different thermal annealings and then implanted with Fe+, Cu+, Zn+, Ga+, As+. A subsequent air annealing was performed after implantation. The system characterized Sheet Resistance measurements, Rutherford Back-scattering Spectroscopy Nuclear Resonant Scattering analyses. Some correlations between the depth distribution of species O/Sn ratios as a function found. results indicate possibility modulating 0/Sn ratio profile implantation which is useful for production stable selective gas sensors.
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