作者: J.P. Aikio , T. Rahkonen
DOI: 10.1109/ECCTD.2005.1523067
关键词:
摘要: A distortion tear-down analysis technique based on harmonic-balance (HB) simulation and polynomial model fitting has been presented recently. However, the of I/sub DS/-V/sub GS/-V/sub DS/ current source LDMOS RF power transistor amplifier suffers from high correlation between controlling voltages V/sub GS/ DS/. In this paper, accuracy results is discussed, techniques to improve reliability are presented.