Determination of surface states in hydrogenated amorphous silicon by subgap absorption measurements

作者: A. K. Sinha , S. C. Agarwal

DOI: 10.1080/13642819808206396

关键词:

摘要: Constant-photocurrent measurement and photothermal deflection spectroscopy have been used as complementary techniques to measure the density of surface states in hydrogenated amorphous silicon (a-S...

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