Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system.
作者： Yvo Barnscheidt , Jan Schmidt , H. Jörg Osten
DOI: 10.1107/S1600576720009255
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摘要: The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory tool. A periodic array of interfacial edge dislocations forms coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg the Ge layer and Si substrate. behaviour CSL was using 2θ/φ scans along [100], [110] [310] directions as well azimuthal φ revealed 90° angular symmetry CSL. Additionally, different thicknesses, from 10 580 nm, were analysed, focusing dependence thickness glancing angles peaks. This method provides ability analyse whether or not epitaxially grown layers exhibit dislocations, gain information about orientation dislocations.
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