Nanostructured Cu-doped ZnS polycrystalline thin films produced by a wet chemical route: the influences of Cu doping and film thickness on the structural, optical and electrical properties

摘要: A wet chemical route was successfully employed to synthesize nanostructured Cu-doped ZnS polycrystalline thin films with Cu-doping content varying from 0 20 %. X-ray diffraction measurements showed that both the undoped and possess a cubic crystal structure (111) preferential orientation an average crystallite size between 9 21 nm. Scanning electron microscope exhibited surface of be homogeneous dense, grains have good connectivity each others. Using energy-dispersive studies, presence Cu in Zn–S lattice detected, which agreement concentration precursors ratios initially used for starting solutions. Optical studies red shifting absorption edge decrease optical band gap value 3.60 3.32 eV as film thickness increased. It also observed increased doping resulted reduction refractive index (n), increment extinction coefficient (k) values visible range. However, by increasing dopant 10 % Cu, electrical resistivity improvement crystalline quality.