Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot.

摘要: Spin-polarized electronic tunneling through a quantum dot coupled to ferromagnetic electrodes is investigated within nonequilibrium Green function approach. An interplay between coherent intradot spin-flip transitions, processes and Coulomb correlations on the studied for current-voltage characteristics of junction in parallel antiparallel magnetic configurations leads. It found that due electric current configuration tends configuration, thus giving rise suppression tunnel magnetoresistance (TMR) threshold bias voltages at which energy level becomes active tunneling. Also, effect negative differential conductance symmetrical junctions, splitting peaks, significant modulation TMR peaks around as well diode-like behavior asymmetrical junctions discussed context transitions. also shown may be inverted selected gate voltages, qualitatively reproduces predicted recently temperatures Kondo regime, observed experimentally beyond regime semiconductor InAs nickel electrodes.