Oxide-rich liner layer for flowable cvd gapfill

摘要: The formation of a gap-filling silicon oxide layer with reduced volume fraction voids is described. deposition involves the an oxygen-rich less-flowable liner before oxygen-poor more-flowable gapfill layer. However, deposited within same chamber as and may both be formed by combining radical component unexcited silicon-containing precursor (i.e. not directly excited application plasma power). has more oxygen content than deposits conformally. rate increased presence contain silicon, nitrogen converted at elevated temperature to less nitrogen. provides source underneath augment gas phase introduced during conversion.